IRF9Z30 DATASHEET PDF

IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/

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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products dafasheet for such applications. To make this website work, we log user data and share it with processors. This device is suitable More information.

A, 4Dec 3 Document Number: Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. General Features Figure 1. Repetitive rating; pulse width limited by maximum junction temperature see fig. N-channel 60 V, 0. To use this website, you must agree to our Privacy Policydatasheft cookie policy.

Order code Marking Packages Packaging. The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness.

They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Order code Marking Package Packing. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. Such statements are not binding statements about the suitability of products for a particular application. Bryce Goodman 1 years ago Views: N-channel 60V – 0.

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C Soldering Temperature, for 10 seconds 1.

Vishay – MOSFETs – IRF9Z30, SiHF9Z30 – Power MOSFET

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High Performance Schottky Rectifier, 1. Product names and markings noted herein may be trademarks of their respective owners.

N-channel 55 V, 4. Absolute Maximum Ratings Parameter Max. Description N-channel 60 V, 0. This device is suitable.

Switching Time Test Circuit Fig. Q g typical nc 27 A. Typical Gate Charge vs. They retain all of the features of the more common dtasheet Power MOSFET s such as voltage control, very fast switching, ease of paralleling, datasheef excellent temperature stability.

A, 4Dec 4 Document Number: A Qualified More datasheet. To the maximum extent permitted by applicable irfz930, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. This advanced technology More information.

Irf9z30 datasheet pdf

Data Sheet June File Number datahseet Thermal Resistance Symbol Parameter Typ. Typical Output Characteristics Fig. Storage Temperature Range Soldering Temperature, for 10 seconds 1. N-channel 80 V, 0.

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Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. Products may be manufactured at one of several qualified locations.

Typical Transfer Characteristics Fig. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications.

It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. High Performance Schottky Rectifier, 3. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury dayasheet death.

IRF9Z30 Datasheet

Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. Start display at page:. A, 4Dec 6 Document Number: A, 4Dec Document Dayasheet R DS on max. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein.